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Desorption ionization on silicon : ウィキペディア英語版
Desorption/ionization on silicon

Desorption/ionization on silicon (DIOS) is a soft laser desorption method used to generate gas-phase ions for mass spectrometry. It is a matrix-free technique in which a sample is deposited on porous silicon and desorbed from the silicon surface by a laser. DIOS can be used to analyze organic molecules, biomolecules and peptides, and to image cells.
==Background==
Soft laser desorption is a soft ionization technique. It ionizes molecules with minimal fragmentation. This is useful for larger molecules and molecules that fragment easily. The first soft laser desorption technique was Matrix-assisted laser desorption/ionization (MALDI). In MALDI, the analyte is first mixed with a matrix solution. The matrix absorbs energy from the laser pulse and transfers it to the analyte, causing desorption and ionization of the sample. MALDI generates ()+ ions.
DIOS was first reported by Gary Siuzdak, Jing Wei and Jillian M. Buriak in 1999. It was developed as a matrix free alternative to MALDI for smaller molecules. Because MALDI uses a matrix, background ions are introduced due to ionization of the matrix. These ions reduce the usefulness of MALDI for small molecules. In contrast, DIOS uses a porous silicon surface to trap the analyte. This surface is not ionized by the laser, allowing for the analysis of small molecules.

抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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